elektronische bauelemente 2SD2114 0.5 a, 25 v npn plastic encapsulated transistor 01-june-2005 rev. a page 1 of 3 rohs compliant product a suffix of ?-c? specifies halogen and lead free features z high dc current gain :h fe = 1200(typ) z high emitter-base voltage. v ebo =12v (min.) z low v ce (sat) . v ce (sat) = 0.18v (typ.) (i c /i b =500ma / 20ma) package dimensions absolute maximum ratings at ta = 25 c parameter symbol ratings unit collector to base voltage v cbo 25 v collector to emitter voltage v ceo 20 v emitter to base voltage v ebo 12 v collector current - continuous i c 500 ma collector power dissipation pc 250 mw junction, storage temperature t j , t stg +150, -55 ~ +150 characteristics at ta = 25 c symbol min. typ. max. unit test conditions bvcbo 25 - - v i c =10ua bvceo 20 - - v i c =1ma bvebo 12 - - v i e =10ua i cbo - - 0.5 ua v cb =20v i ebo - - 0.5 ua v eb =10v *h fe 1 820 - 2700 v ce =3v, i c =10ma v ce(sat) - - 0.4 v i c =500ma, i b =20ma ft - 350 - mhz v ce =10v, i c =50ma, f=100mhz c ob - 8 - pf v cb =10v, i e =0, f=1mhz r (on) - 0.8 - v in =0.1v(rms),i b =1ma, f=1khz classification of h fe 1 rank v w range 820 - 1800 1200 - 2700 marking bbv bbw collector base emitter dim min max a 2.800 3.040 b 1.200 1.400 c 0.890 1.110 d 0.370 0.500 g 1.780 2.040 h 0.013 0.100 j 0.085 0.177 k 0.450 0.600 l 0.890 1.020 s 2.100 2.500 v 0.450 0.600 all dimension in mm sot-23 k j c h l a b s g v 3 1 2 d top view 1 2 3
elektronische bauelemente 2SD2114 0.5 a, 25 v npn plastic encapsulated transistor 01-june-2005 rev. a page 2 of 3 characteristic curves
elektronische bauelemente 2SD2114 0.5 a, 25 v npn plastic encapsulated transistor 01-june-2005 rev. a page 3 of 3
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